{"id":139,"date":"2019-05-27T09:10:22","date_gmt":"2019-05-27T07:10:22","guid":{"rendered":"https:\/\/magnefi.c2n.u-psud.fr\/?page_id=139"},"modified":"2020-06-23T11:45:45","modified_gmt":"2020-06-23T09:45:45","slug":"sensitec-control-of-strain-in-magnetoresistive-elements-and-its-utilization","status":"publish","type":"page","link":"https:\/\/magnefi.c2n.u-psud.fr\/?page_id=139","title":{"rendered":"Sensitec: Control of strain in magnetoresistive elements and its utilization"},"content":{"rendered":"\n
\"\"<\/figure><\/div>\n\n\n\n

Host:<\/strong> Sensitec GmbH<\/p>\n\n\n\n

PHD\nenrolment:<\/strong> Johannes Gutenberg University Mainz<\/p>\n\n\n\n

Location:<\/strong> Mainz, Germany<\/p>\n\n\n\n

Supervisor:<\/strong> Ronald\nLehndorff<\/p>\n\n\n\n

Scientific\nproject<\/strong>:<\/strong><\/p>\n\n\n\n

Magnetoresistive (MR) sensors consist of magnetic\nthin films and micro- to nanostructures. It is important to understand the\nbehaviour of magnetic domain walls in these structures, to be able to optimize\nthe performance of the sensors. Strain or mechanical stress is, up to now,\nalways seen as a negative impact on MR sensors. In this project, the influence\nof strain on MR sensor will be studied with two aspects. On the one hand, the\nconventional approach of minimizing the sensitivity of the sensor to strain by\nmeans of design and choice of materials will be pursued. On the other hand, the\nutilization of strain to realise new or improved functionalities will be a\ngoal.<\/p>\n\n\n\n

Manipulating domain walls, specifically creating,\nannihilating, pinning or guiding them is of great interest. These basic\nfunctionalities can be the building blocks of domain wall based MR sensors or\nother devices like logic circuits. Different goals within this project are: <\/p>\n\n\n\n