JGU II: Ferroelectric gating of the antiferromagnet /ferromagnet coupling

Host: Johannes Gutenberg-University Mainz

Location: Mainz, Germany

Supervisor: Gerhard Jakob

Scientific project:

Materials that are at the same time ferroelectric and ferromagnetic could enable switching of the ferromagnetic state by an electric field instead of a magnetic field which promises much faster and energy efficient switching. Unfortunately the room temperature multiferroics materials are ferroelectric and antiferromagnetic hindering this direct way.

Our research aims to couple such room temperature multiferroic antiferromagnets to double perovskites and other ferrimagnets what will enable to couple the ferrimagnetic moment to the electric field. In addition to the magnetic exchange coupling effect the charge of the ferroelectric will act on the magnetic layer and modify magnetic interface effects as the existence of perpendicular magnetic anisotropy or the Dzyaloshinskii Moriya interaction. This can lead to new device architectures where the magnetism is manipulated by electric fields.

The preparation of suitable thin film samples will be done Pulsed Laser Deposition (PLD). Structural characterization, nanofabrication and a broad range of measurement tools are available in the lab. Training at JGU will be supplemented by complementary training at partners enabling a broad scientific and technological training.