Spin Ion: Interface engineering by He+ ion irradiation

Host: Spin-Ion Technologies

Enrollment: Paris Saclay University

Location: Palaiseau, France

Supervisor: Mamour Sall

Scientific project:

The PhD student will study a new concept of scalable and low power E-Field gating domain wall (DW) devices based on realizing modulation of magnetic properties by using ion irradiation. The magnetic properties in magnetic thin films will be tailored by using ion irradiation induced interface engineering. Irradiation through a lithography mask and Focused Ion Beam techniques will also allow the creation of pattern of magnetic properties across a film or nanodevice, in particular gradient of anisotropy that can favours DW automotion.

Along this line, the PhD student will have two foundational objectives: (ii) to understand the effect of interface chemical composition and ordering on magnetic properties such as interface anisotropy, DMI and Spin Hall Effect and (ii) to switch domain wall devices by pure electric field without applying magnetic field or current. This project will generate a strong impact in terms of know-how and conception/realization of radically new ultra-low power spintronics devices. It is a pathfinder project to investigate practical feasibility of a new idea, and if successful, it can lead to the exploitation of the results by the start-up company. In this context, the student will also participate to the business development of the start-up company.